data sheet 1994 printed in japan silicon transistor array description the m pa1436a is npn silicon epitaxial darlington power transistor array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. features ? easy mount by 0.1 inch of terminal interval. ? high h fe for darlington transistor. ? c-e reverce diode built in. ? high speed switching. ordering information part number package quality grade m PA1436AH 10 pin sip standard please refer to quality grade on nec semiconductor device (document number iei-1209) published by nec corporation to know the specification of quality grade on the devices and its recommended applications. absolute maximum ratings (t a = 25 ?c) collector to base voltage v cbo 150 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 8v collector current (dc) i c(dc) 3 a/unit collector current (pulse) i c(pulse) * 5 a/unit base current (dc) i b(dc) 0.3 a/unit total power dissipation p t1 ** 3.5 w (t a = 25 ?c) total power dissipation p t2 ** 28 w (t c = 25 ?c) junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c * pw 350 m s, duty cycle 2 % ** 4 circuits document no. ic-3482 (o.d. no. ic-8705) date published september 1994 p m pa1436a npn silicon power transistor array high speed switching use (darlington transistor) industrial use package dimension (in millimeters) 26.8 max. 1.4 1 0.6 ?.2 2.54 0.5 ?.2 1.4 4.0 10 10 min. 2.5 2 3 4 5 6 7 8 9 10 connection diagram 3 2 1 5 4 7 6 10 9 8 (b) r 1 (e) (c) r 2 pin no. 2, 4, 6, 8: base (b) 3, 5, 7, 9: collector (c) 1, 10: emitter (e) r 1 = 5 k w r 2 = 1.3 k w . . . . the information in this document is subject to change without notice.
m pa1436a 2 electrical characteristics (t a = 25 ?c) characteristic symbol min. typ. max. unit test conditions collector leakage current i cbo 1 m a v cb = 100 v, i e = 0 emitter leakage current i ebo 5 ma v eb = 5 v, i c = 0 dc current gain h fe1 * 2000 20000 v ce = 2 v, i c = 1.5 a dc current gain h fe2 * 1000 v ce = 2 v, i c = 3 a collector saturation voltage v ce(sat) * 1 1.5 v i c = 1.5 a, i b = 1.5 ma base saturation voltage v be(sat) * 1.8 2 v i c = 1.5 a, i b = 1.5 ma turn on time t on 0.3 m s storage time t stg 1.5 m s fall time t f 0.4 m s * pw 350 m s, duty cycle 2 % /pulsed switching time test circuit v in i b1 i c r l = 33 w i b2 pw pw = 50 s duty cycle 2 % m v bb = ? v v cc = 50 v t.u.t. t on 90 % 10 % collector current wave form base current wave form t stg t f i c i b2 i b1 i c = 1.5 a i b1 = ? b2 = 3 ma v cc = 50 v, r l = 33 w see test circuit . .
m pa1436a 3 typical characteristics (t a = 25 ?c) 0 0.01 110 0.1 1 2 3 4 25 50 75 100 125 150 safe operating area v ce - collector to emitter voltage - v i c - collector current - a total power dissipation vs. ambient temperature t a - ambient temperature - ?c p t - total power dissipation - w i c - collector current - a dt - percentage of rated current - % t c = 25 ?c single pulse nec PA1436AH m 4 circuits operation 3 circuits operation 2 circuits operation 1 circuit operation total power dissipation vs. case temperature p t - total power dissipation - w 0 10 30 20 25 50 75 100 125 150 t c - case temperature - ?c 4 circuits operation 3 circuits operation 2 circuits operation 1 circuit operation 20 40 60 80 100 0.1 0.1 0 50 100 150 100 1000 i c(pulse) max. v ceo max. s/b limited 10 ms s/b limited pw =1 ms 50 ms i c(dc) max. dissipation limited 1 2 3 0 123 t c - case temperature - ?c collector current vs. base to emitter voltage derating curve of safe operating area v be - base to emitter voltage - v v ce = 2.0 v pulsed i c - collector current - a 3 2 1 0 12343 collector current vs. collector to emitter voltage v ce - collector to emitter voltage - v 200 a m 250 a m 300 a m 400 a m 150 a m 120 a m i b = 100 a m dissipation limited
m pa1436a 4 100 0.01 0.1 1000 dc current gain vs. collector current i c - collector current - a h fe - dc current gain v ce = 2.0 v pulsed 10000 1 10 collector saturation voltage vs. collector current i c - collector current - a v ce(sat) - collector saturation voltage - v i c /i b = 1000 pulsed 1 0.1 10 1 10 base saturation voltage vs. collector current i c - collector current - a v be(sat) - base saturation voltage - v i c /i b = 1000 pulsed 1 10 1 10 0.1 1 1 turn on time. storage time and fall time vs. collector current i c - collector current - a t f , t stg , t on - switching time - s m 10 10 t stg t f t on
m pa1436a 5 reference document name document no. nec semiconductor device reliability/quality control system. tei-1202 quality grade on nec semiconductor devices. iei-1209 semiconductor device mounting technology manual. iei-1207 semiconductor device package manual. iei-1213 guide to quality assurance for semiconductor devices. mei-1202 semiconductor selection guide. mf-1134
m pa1436a no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. the devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. if customers intend to use nec devices for above applications or they intend to use "standard" quality grade nec devices for applications not intended by nec, please contact our sales people in advance. application examples recommended by nec corporation standard: computer, office equipment, communication equipment, test and measurement equipment, machine tools, industrial robots, audio and visual equipment, other consumer products, etc. special: automotive and transportation equipment, traffic control systems, antidisaster systems, anticrime systems, etc. m4 92.6 [memo]
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